| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 200V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 150V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 120MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 120~240 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 500mW/0.5W |
| Description & Applications | NPN Silicon epitaxial Transistors High voltage switching applications Features High voltage High transition frequency Small flat package Complementary to 2SA1200 |
| 描述与应用 | NPN硅外延晶体管 高电压开关应用 特点 高压 高转换频率 小扁平封装 互补型2SA1200 |