| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
13V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
6V |
| 集电极连续输出电流IC Collector Current(IC) |
40mA |
| 直流电流增益hFE DC Current Gain(hFE) |
100~160 |
| 截止频率fT Transtion Frequency(fT) |
6GHZ |
| 耗散功率Pc Power Dissipation |
0.1W |
| Description & Applications |
Features • TOSHIBA Transistor Silicon NPN Epitaxial Planar Type • Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6. • Superior noise characteristics • Superior performance in buffer and oscillator applications. • VHF~UHF Band Low-Noise Amplifier Applications |
| 描述与应用 |
特点 •东芝晶体管NPN硅外延平面型 •两个设备都成立于细间距，小型模具包（6针）：FS6。 •高级噪声特性 •缓冲和振荡器的应用中的卓越性能。 •VHF〜UHF频段低噪声放大器应用 |