| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
10V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
5V |
| 集电极连续输出电流IC Collector Current(IC) |
15mA/40mA |
| 直流电流增益hFE DC Current Gain(hFE) |
70~140/80~160 |
| 截止频率fT Transtion Frequency(fT) |
10GHZ |
| 耗散功率Pc Power Dissipation |
0.1W |
| Description & Applications |
Features • TOSHIBA Transistor Silicon NPN Epitaxial Planar Type • Two devices are built in to the super-thin and extreme super mini (6 pins) package: ES6 • VHF~UHF Band Low Noise Amplifier Applications |
| 描述与应用 |
特点 •东芝晶体管NPN硅外延平面型 •两个设备都建在超薄和极端超小型（6引脚）封装：ES6 •VHF〜UHF频段低噪声放大器的应用 |