| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
10V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
5V |
|
集电极连续输出电流IC
Collector Current(IC) Q1/Q2
|
25mA/40mA |
|
直流电流增益hFE DC Current Gain(hFE)
Q1/Q2
|
70~140/80~160 |
|
截止频率fT Transtion Frequency(fT)
Q1/Q2
|
12GHZ/10GHZ |
| 耗散功率Pc Power Dissipation |
0.1W |
| Description & Applications |
Features • TOSHIBA Transistor Silicon NPN Epitaxial Planar Type • VHF-UHF Band Low Noise Amplifier Application • VHF-UHF Band Oscillator Application |
| 描述与应用 |
特点 •东芝晶体管NPN硅外延平面型 •VHF-UHF波段低噪声放大器的应用 •VHF-UHF频带振荡器的应用 |