| 最大源漏极电压Vds Drain-Source Voltage | |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | 2.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 90mΩ@ VGS =4.5V, ID =3.2A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6~1.2V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | Power MOSFET Features • Ultra Low RDS(on) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive • Diode Exhibits High Speed, Soft Recovery • Avalanche Energy Specified • IDSS Specified at Elevated Temperature Applications • Power Management in Portable and Battery−Powered Products, i.e.:Cellular and Cordless Telephones, and PCMCIA Cards • Lithium Ion Battery Applications • Notebook PC |
| 描述与应用 | 功率MOSFET 特点 •超低RDS（上） •更高的效率延长电池寿命 •逻辑电平栅极驱动器 •二极管具有高速软恢复 •雪崩能量 •IDSS指定高温 应用 •电源管理在便携式和电池供电产品，即：蜂窝，无绳电话，PCMCIA卡 •锂离子电池的应用 •笔记本电脑 |