| 场效应管类型 |
N 沟道 |
MOS最大源漏极电压Vds
Drain-Source Voltage |
40V |
MOS最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V |
MOS最大漏极电流Id
Drain Current |
4.2A |
MOS源漏极导通电阻Rds(on)
FET Drain-Source On-State Resistance |
RDS(on) = 75 m @ Vgs = 4.5 V
RDS(on) = 143 m @ Vgs = 2.5 V
|
MOS开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.6V |
| 二极管类型 |
肖特基二极管 |
DIODE反向电压Vr
Reverse Voltage |
20V |
DIODE平均整流电流Io
Average Rectified Current |
1A |
DIODE最大正向压降VF
Forward Voltage(Vf) |
0.365V |
耗散功率Pd
Power Dissipation |
2.1W |
描述与应用
Description & Applications |
|
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在线阅读 |