| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 2A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 220 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 70mV~310mV |
| 耗散功率PcPower Dissipation | 1.2W |
| Description & Applications | 20 V NPN low VCEsat (BISS) transistor FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat generation. APPLICATIONS • Power management applications • Low and medium power DC/DC convertors • Supply line switching • Battery chargers • Linear voltage regulation with low voltage drop-out (LDO). DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package |
| 描述与应用 | 20 V NPN低VCEsat（BISS）晶体管 特点 •低集电极 - 发射极饱和电压VCE监测 和 相应的低RCEsat的 •高集电极电流能力 •高集电极电流增益 •由于产生的热量减少，提高了效率。 应用 •电源管理应用 •低功率和中功率DC/ DC转换器 •供电线路开关 •电池充电器 •线性电压调节，低电压降 （LDO）。 说明 NPN低VCEsat 在SOT23塑料封装晶体管 |