| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流ICCollector Current(IC) | -3A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -400mV/-0.4V |
| 耗散功率PcPoWer Dissipation | 600mW/0.6W |
| Description & Applications | 20 V low VCE(sat) PNP transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Heavy duty |
| 描述与应用 | 20伏的低VCE（sat）的PNP晶体管 特点 •低集电极 - 发射极饱和电压 •高电流能力 •提高设备的可靠性，由于产生的热量减少 应用 •供电线路开关电路 •电池管理应用 •DC / DC转换器应用 •闪光灯单元 •重载 |