| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流ICCollector Current(IC) | -3A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率PcPoWer Dissipation | 600mW/0.6W |
| Description & Applications | PNP transistor FEATURES • High current capabilities • Low VCEsat • NPN complement: PBSS4350D. APPLICATIONS • Heavy duty battery powered equipment (Automotive,Telecom and Audio/Video) such as motor and lamp drivers. • VCEsat critical applications such as the latest low supply voltage IC applications • All battery driven equipment to save battery power |
| 描述与应用 | PNP晶体管 特点 •高电流能力 •低VCESAT •NPN补充：PBSS4350D。 应用 •重载电池供电设备（汽车，电信和音频/视频），如电机和灯驱动器。 VCE监测的关键应用，如最新的低电源 电压IC应用 •所有电池驱动的设备，以节省电池电量 |