| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -300V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −300V |
| 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) | 50MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 40 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 250mW/0.25W |
| Description & Applications | PNP high-voltage transistor FEATURES • Low current • High voltage APPLICATIONS • Telephony • Professional communication equipment. DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: PMBTA42. |
| 描述与应用 | PNP高电压晶体管 特点 •低电流 •高电压 应用 •电话 •专业通信设备。 说明 PNP高电压晶体管在SOT23塑料包装。 NPN补充：PMBTA42。 |