| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 40V/-40V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/-100mA |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 120 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 200mV/-200mV |
| 耗散功率Pc Power Dissipation | 300mW |
| Description & Applications | Features • NPN/PNP general purpose transistors • Low current (max. 100 mA) • Low voltage (max. 40 V) • Reduces number of components and boardspace. APPLICATIONS • General purpose switching and amplification |
| 描述与应用 | 特点 •NPN / PNP通用晶体管 •低电流（最大100 mA） •低电压（最大40 V） •减少元件数量和电路板空间 应用 •通用开关和放大 |