| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -80V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流ICCollector Current(IC) | -2A |
| 截止频率fTTranstion Frequency(fT) | 75MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 75 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 800mW/0.8W |
| Description & Applications | PNP Silicon PlanarEpitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for medium power surface mount applications. • High Current • The SOT–223 Package can be soldered using wave or reflow. • NPN Complement is PZT651T1 |
| 描述与应用 | PNP硅PlanarEpitaxial晶体管 这PNP硅外延晶体管设计用于工业和消费类应用。该设备是设在SOT-223封装，是专为中等功率表面贴装应用。 •高电流 •SOT-223包装可以使用波或回流焊接。 •NPN补充型PZT651T1 |