| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 180V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 160V |
| 集电极连续输出电流ICCollector Current(IC) | 600mA/0.6A |
| 截止频率fTTranstion Frequency(fT) | 100MHz~400MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 80~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | Features • NPN Silicon Transistor • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with SBT5401 Descriptions • General purpose amplifier • High voltage application |
| 描述与应用 | 特点 •NPN硅晶体管 •高集电极击穿电压：VCBO=180V，VCEO=160V •低集电极饱和电压VCE（星期六）= 0.5V（最大值） •互补配对SBT5401 简述 •通用放大器 •高电压施加 |