| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -8V |
| 最大漏极电流IdDrain Current | -4A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 100mΩ@ VGS = -2.5V, ID = -3.2A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.4~-1.5V |
| 耗散功率PdPower Dissipation | 1.6W |
| Description & Applications | P-Channel 2.5V Specified Power Trench MOSFET Applications Load switching Battery protection Power management Features Fast switching speed Low gate charge |
| 描述与应用 | P沟道2.5V额定功率沟道MOSFET 应用 负载开关 电池保护 电源管理 特点 开关速度快 低栅极电荷 |