| 最大源漏极电压VdsDrain-Source Voltage | 20V/-20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V/12V |
| 最大漏极电流IdDrain Current | 400mA/-200mA |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 800mΩ@ VGS = 4V, ID = 200mA / 3300mΩ@ VGS = -4V, ID =-100mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.6~1.1V/-0.6~-1.1V |
| 耗散功率PdPower Dissipation | 300mW/0.3W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type Power Management Switch High Speed Switching Applications Small package Low on resistance Q1: Ron = 0.8 Ω (max) (@VGS = 4 V) Q2: Ron = 3.3 Ω (max) (@VGS = −4 V) Low gate threshold voltage |
| 描述与应用 | 东芝场效应晶体管的硅N/ P沟道MOS类型 电源管理开关 高速开关应用 ？小型封装 ？低阻力Q1：RON =0.8Ω（最大）（@ VGS=4 V） Q2：RON =3.3Ω（最大值）（@ VGS=-4 V） ？低栅极阈值电压 |