| 最大源漏极电压VdsDrain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | 400mA/0.4A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 800mΩ@ VGS = 4V, ID = 200mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.6~1.1V |
| 耗散功率PdPower Dissipation | 300mW/0.3W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications ●Small package ●Low on resistance : Ron = 0.8 Ω (max) (@VGS = 4 V) Ron = 1.2 Ω (max) (@VGS = 2.5 V) ●Low gate threshold voltage |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 ●小型封装 ●低导通电阻RON =0.8Ω（最大值）（@ VGS=4 V） RON=1.2Ω（最大）（@ VGS= 2.5 V） ●低栅极阈值电压 |