| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −32V |
| 集电极连续输出电流ICCollector Current(IC) | -2A |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 160~320 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −800mV/-0.8V |
| 耗散功率PcPoWer Dissipation | 500mW/0.5W |
| Description & Applications | PNP Silicon Transistor Description • Medium power amplifier Features • PC(Collector dissipation)=2W • Low collector saturation voltage • Complementary pair with STD1766 |
| 描述与应用 | PNP硅晶体管 描述 •中等功率放大器 特点 •PC（集电极耗散）= 2W •低集电极饱和电压 •互补配对STD1766 |