| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -220V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -200V |
| 集电极连续输出电流ICCollector Current(IC) | -2A |
| 截止频率fTTranstion Frequency(fT) | 110MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -370mV/-0.37V |
| 耗散功率PcPoWer Dissipation | 3W |
| Description & Applications | SOT223 PNP SILICON PLANAR HIGH CURRENT(HIGH PERFORMANCE) TRANSISTORS * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps COMPLEMENTARY TYPES FZT956 |
| 描述与应用 | SOT223 PNP硅平面高电流（高性能）晶体管 * 4安培的连续电流（10安培的峰值电流） *极低的饱和电压 *出色的增益特性到3安培 互补类型FZT956 |