最大源漏极电压VdsDrain-Source Voltage | 50V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
最大漏极电流IdDrain Current | 100mA/0.1A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 2500mΩ@ VGS = 10V, ID = 10mA |
开启电压Vgs(th)Gate-Source Threshold Voltage | 0.8~1.8V |
耗散功率PdPower Dissipation | 300mW/0.3W |
Description & Applications | N-CHANNEL MOS FET (6-PIN 2 CIRCUITS) The uPA602T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two MOS FET circuits in package the same size as SC-59 • Complement to uPA603T • Automatic mounting supported |
描述与应用 | N沟道MOS FET(6-PIN2电路) 的uPA602T是一个小型的模具装置,设置有两个 MOS FET电路。它实现了高密度安装, 节省了安装成本。 特点 •两个MOS FET的电路包的大小相同 SC-59 •补充uPA603T的 •支持自动安装 |