| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -12V |
| 集电极连续输出电流ICCollector Current(IC) | -4A |
| 截止频率fTTranstion Frequency(fT) | 110MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 475 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率PcPoWer Dissipation | 1.5W |
| Description & Applications | PNP SILICON LOW SATURATION SWITCHING TRANSISTOR DESCRIPTION Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline, this new 4th generation low saturation transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • Low Equivalent On Resistance • Extremely Low Saturation Voltage APPLICATIONS • DC - DC Converters (FET Driving) • Charging Circuits • Power switches • Motor control |
| 描述与应用 | 低饱和PNP硅开关晶体管 说明 包装创新采用2mm x2mm MLP（微型引线封装）外形， 这个新第四代低饱和晶体管提供了非常低的通态损耗使得它非常适合用在DC-DC电路和各种驱动和电源管理功能。 特点 •低等效电阻 •极低的饱和电压 应用 •DC - DC转换器（FET驱动） •充电电路 •电源开关 •电机控制 |