| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 115mA/0.115A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 3,2Ω/Ohm @50mA,5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2.5V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | Features ·High density cell design for low RDS(ON) Voltage controlled small signal switch High saturation current capability. |
| 描述与应用 | 高密度电池设计的低RDS（ON） ·电压控制小信号开关 ·高饱和电流能力 |