| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 45V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 110~220 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 200~600 mV |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | NPN general purpose transistor FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification, especially in portable communication equipment • Electronic data processing (EDP) and consumer applications. |
| 描述与应用 | NPN通用晶体管 特点 •低电流（最大100 mA） •低电压（最大65 V）。 应用 •通用开关和放大，特别是在便携式通信设备 •电子数据处理（EDP）和消费应用。 |