| 反向电压VrReverse Voltage | 35V |
| 平均整流电流IoAverage Rectified Current | 200mA/0.2A |
| 最大正向压降VFForward Voltage(Vf) | 1.0V |
| 反向恢复时间TrrReverse Recovery Time | 2ns |
| 最大耗散功率PdPower Dissipation | 300mW/0.3W |
| Description & Applications | • SILICON EPITAXIAL plAnAr UltrA HIGH speed Switching LeAdless Diode • High Speed • High reliAbility • FlAt mounting • low forwArd VoltAge drop • smAll size • core driVing possible |
| 描述与应用 | •硅外延平面超高速开关二极管无铅 •高速 •可靠性高 •可行的平面安装 •低正向压降 •小型 •核心驱动可能 |