| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −25V |
| 集电极连续输出电流ICCollector Current(IC) | -4A |
| 截止频率fTTranstion Frequency(fT) | 135MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 250~800 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -350mV/-0.35V |
| 耗散功率PcPoWer Dissipation | 2.5W |
| Description & Applications | PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FEATURES 4 Amp Continuous Current 10 Amp Pulse Current Low Saturation voltage High Gain |
| 描述与应用 | PNP硅平面中功率高增益晶体管 特点 4安培连续电流 10安培脉冲电流 低饱和电压 高增益 |