| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -12V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 270~680 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -250mV/-0.25V |
| 耗散功率PcPoWer Dissipation | 125mW/0.125W |
| Description & Applications | PNP Silicon epitaxial planar type For general amplification Complementary to 2SC6037G Features • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 | PNP硅外延平面型 对于一般放大 互补型2SC6037G 特点 •低集电极 - 发射极饱和电压VCE（饱和） •SS-迷你型包装，让精简的设备和通过自动插入磁带包装 |