| 最大源漏极电压VdsDrain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 6V |
| 最大漏极电流IdDrain Current | 540mA/0.54A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 900mΩ@ VGS =1.8V, ID =350mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.45~1V |
| 耗散功率PdPower Dissipation | 250mW/0.25W |
| Description & Applications | Small Signal MOSFET Features • Low RDS(on) Improving System Efficiency • Low Threshold Voltage • Small Footprint 1.6 x 1.6 mm • ESD Protected Gate • These are Pb−Free Devices Applications • Load/Power Switches • Power Supply Converter Circuits • Battery Management • Cell Phones, Digital Cameras, PDAs, Pagers, etc |
| 描述与应用 | 小信号MOSFET 特点 •低RDS（ON）提高系统效率 •低阈值电压 •小尺寸1.6×1.6毫米 •ESD保护门 •这些都是Pb-Free设备 应用 •负载/功率开关 •电源转换器电路 •电池管理 手机，数码相机，掌上电脑，传呼机等 |