| 最大源漏极电压VdsDrain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | 4A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 36mΩ@ VGS =2.5V, ID =1A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.4~1.3V |
| 耗散功率PdPower Dissipation | 700mW/0.7W |
| Description & Applications | For lithium-ion secondary battery protection circuit Feature Dual P-channel MOS FET in one package 2.85V drive Low drain-source ON resistance Eco-friendly Halogen-free package |
| 描述与应用 | 对于锂离子二次电池的保护电路 特点 双P沟道MOS场效应管在一个封装中 2.85V驱动 低漏源导通电阻 环保型无卤素封装 |