| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -160V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −150V |
| 集电极连续输出电流ICCollector Current(IC) | −600mA/- 0.6A |
| 截止频率fTTranstion Frequency(fT) | 100~400MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~240 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −200mV/-0.2V |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • high collector breakdown voltage • Low collector saturation voltage • Complementary pair with SBT5551 |
| 描述与应用 | PNP硅晶体管 描述 •通用放大器 •高电压施加 特点 •高集电极击穿电压 •低集电极饱和电压 •互补配对SBT5551 |