| 最大源漏极电压Vds Drain-Source Voltage | 70V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 6.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | 4.06W |
| Description & Applications | 70V N-channel enhancement mode MOSFET Summary V(BR)DSS=70V : RDS(on)=0.13 ID=6.1A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • DPAK package |
| 描述与应用 | 70V N沟道增强型MOSFET 总结 V（BR）DSS=70V的RDS（on）= 0.13？ ID=6.1A 描述 这种新一代沟道MOSFET由Zetex采用了独特的 结构，结合具有快速的低导通电阻的好处 开关速度。这使得它们成为理想的高效率，低电压 电源管理应用。 •低导通电阻 •开关速度快 •低门槛 •低栅极驱动器 •DPAK封装 |