| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 115mA/0.115A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2Ω/Ohm @50mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant Qualified to AEC-Q101 Standards for High Reliability |
| 描述与应用 | N沟道增强型场效应晶体管 特性 N沟道增强型场效应 晶体管 低导通电阻 低栅极阈值电压 低输入电容 开关速度快 低输入/输出漏 超小型表面贴装封装 无铅/ RoHS标准 符合AEC-Q101高可靠性标准 |