集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -50V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −45V |
集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
截止频率fTTranstion Frequency(fT) | 100MHz |
直流电流增益hFEDC Current Gain(hFE) | 250~600 |
管压降VCE(sat)Collector-Emitter SaturationVoltage | −700mV/-0.7V |
耗散功率PcPoWer Dissipation | 225mW/0.225W |
Description & Applications | PNP epitaxial planar transistor General Purpose Transistors FEATURE General purpose switching and amplification. NPN complement: LBC817 Series. Pb-Free Package is available |
描述与应用 | PNP外延平面晶体管 通用晶体管 特写 通用的开关和放大。 NPN补充:LBC817系列。 无铅封装 |