| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) | 80MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 160~460 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 125mW/0.125W |
| Description & Applications | PNP Silicon epitaxial planar type For general amplification Complementary to 2SC6054G Features High forward current transfer ratio hFE SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. |
| 描述与应用 | PNP硅外延平面型 对于一般放大 互补型2SC6054G 特点 高正向电流传输比HFE SS-迷你型包装，允许缩小设备规模和通过自动插入磁带包装。 |