| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) Q1/Q2 |
50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) Q1/Q2 |
50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) Q1/Q2 |
100mA/-100mA |
| Q1基极输入电阻R1 Input Resistance(R1) |
47KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1 Input Resistance(R1) |
47KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
1 |
| 直流电流增益hFE DC Current Gain(hFE) |
80 |
| 截止频率fT Transtion Frequency(fT) Q1/Q2 |
|
| 耗散功率Pc Power Dissipation Q1/Q2 |
300mW/0.3W |
| Description & Applications |
Features • PNP/PNP resistor-equipped transistors; • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral driver • Replacement of general purpose transistors in digital applications • Control of IC inputs. |
| 描述与应用 |
特点 •PNP / PNP电阻配备晶体管; •内置偏置电阻 •简化电路设计 •减少元件数量 •减少取放成本。 应用 •低电流的外设驱动程序 •通用晶体管数字应用的更换 •控制IC投入。 |