| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 6V |
| 集电极连续输出电流ICCollector Current(IC) | 35mA |
| 截止频率fTTranstion Frequency(fT) | 14GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 210mW/0.21W |
| Description & Applications | NPN 14 GHz wideband transistor High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability Intended for Radio Frequency (RF) front end applications in the GHz range, such as: analog and digital cellular telephones cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.) radar detectors pagers Satellite Antenna TeleVision (SATV) tuners repeater amplifiers in fiber-optic systems |
| 描述与应用 | 14 GHz的宽带晶体管NPN 高功率增益 低噪声系数 高转换频率 黄金金属确保卓越的可靠性 面向射频（RF）前端应用在GHz范围内，如： 模拟和数字蜂窝电话 无绳电话机（无绳电话（CT），个人通讯 网络（PCN），数字增强无绳通信（DECT），等等。） 雷达探测器传呼机卫星天线电视（SATV）调谐器的 在光纤系统中的中继放大器 |