| 最大源漏极电压VdsDrain-Source Voltage |
20v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage |
-20v |
| 漏极电流(Vgs=0V)IDSSDrain Current |
0.21~0.35ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage |
-0.37~-1v |
| 耗散功率PdPower Dissipation |
100mW/0.1W |
| Description & Applications |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM FEATURES • High gain −0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Super thin thickness package t = 0.37 mm TYP. |
| 描述与应用 |
N-沟道硅结型场效应晶体管 流脑的阻抗变换器 特点 •高增益 -0.5分贝（VDS=2.0 V，C =5 pF的，RL=2.2kΩ的） •低噪音 -109分贝（VDS=2.0 V，C =5 pF的，RL=2.2kΩ上） •超薄厚度包 T =0.37毫米TYP。 |