| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) | 80MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 180~390 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 125mW/0.125W |
| Description & Applications | PNP Silicon epitaxial planar transistor For general amplification Complementary to 2SD2216J Features 1)High foward current transfer ratio hFE. 2)Mini Power type package |
| 描述与应用 | PNP硅外延平面晶体管 对于一般的放大 补充型2SD2216J 特点 1）高FOWARD的电流传输比HFE。 2）小功率型封装 |