| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流ICCollector Current(IC) | −200mA/-0.2A |
| 截止频率fTTranstion Frequency(fT) | 250MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -400mV/-0.4V |
| 耗散功率PcPoWer Dissipation | 350mW/0.35W |
| Description & Applications | PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary pair with SBT3904 |
| 描述与应用 | PNP硅晶体管 简述 •通用应用 •开关应用 特点 •低集电极饱和电压 •集电极输出电容 •互补配对SBT3904 |