| 最大源漏极电压VdsDrain-Source Voltage |
-30 |
| 最大栅源极电压Vgs(±)Gate-Source Voltage |
20V |
| 最大漏极电流IdDrain Current |
-5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance |
75mΩ@ VGS = -4.5V,ID = -3.6A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage |
1V |
| 耗散功率PdPower Dissipation |
2W |
| Description & Applications |
P-Channel 30-V (D-S) MOSFET Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Battery Powered Instruments • Portable Computing • Mobile Phones • GPS Units and Media Players |
| 描述与应用 |
P沟道30-V（D-S）的MOSFET 特点： •低RDS（ON）的沟槽技术 •低热阻抗 •开关速度快 典型应用： •电池供电的仪器 •便携式计算 •手机 •GPS装置和媒体播放器 |