| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -2.7A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.156Ω @-1.9A,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1--3.0V |
| 耗散功率PdPower Dissipation | 2.3W |
| Description & Applications | FEATURES • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested |
| 描述与应用 | Power MOSFET • 100 % Rg Tested • 100 % UIS Tested |