| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -350V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -350V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 50MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 20~200 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -1000mV/-1V |
| 耗散功率PcPoWer Dissipation | 300mW/0.3W |
| Description & Applications | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available (DN350T05) Ideal for Medium Power Amplification and Switching Lead Free By Design/RoHS Compliant Qualified to AEC-Q101 Standards for High Reliability |
| 描述与应用 | PNP小信号表面贴装晶体管 特点 外延平面电路小片建设 互补NPN型（DN350T05） 非常适于中等功率放大和开关 无铅设计/符合限制有害物质指令（RoHS）规范要求 合格的AEC-Q101高可靠性标准 |