| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 25V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 50Mhz |
| 直流电流增益hFEDC Current Gain(hFE) | 400~1200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | |
| Description & Applications | Low Noise Transistors This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. |
| 描述与应用 | 低噪声晶体管 该设备是专为低噪声，高增益，通用 放大器应用集电极电流1μA到50毫安。 |