击穿电压VBOBreakover voltage | |
断态重复峰值电压VDRMRepetitive peak off-state voltage | |
峰值通态电压VTMOn-state voltage | |
峰值脉冲电流(8 x 20us)Current - Peak Pulse (8 x 20µs) | |
峰值脉冲电流(10 x 1000us)Current - Peak Pulse (10 x 1000µs) | |
保持电流IHHolding current | |
Description & Applications | Description The CR range of protectors are based on the proven technology of the T10 thyristor product. Designed for transient voltage protection of telecommunications equipment, it provides higher power handling than a conventional avalanche diode (TVS) and when compared to a GDT offers lower voltage clamping levels and infinite surge life. Packaged in a transfer molded DO-214AA surface mount outline designed for high speed pick & place machines used |
描述与应用 | 描述 CR的保护范围是基于成熟的 技术的T10晶闸管产物。专为 瞬态电压保护电信 设备,它提供了比更高的功率处理 以往的雪崩二极管(TVS)相比 一个GDT提供低钳位电压水平和无限激增 生活。 转移成型DO-214AA表面贴装封装 轮廓设计的高速取放机 |