| 最大源漏极电压VdsDrain-Source Voltage | 30V/-20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V/12V |
| 最大漏极电流IdDrain Current | 1.5A/-1.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 360mΩ@ VGS =2.5V, ID =1A/430mΩ@ VGS =-2.5V, ID =-0.75A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.5~1.5V/-0.7~-2V |
| 耗散功率PdPower Dissipation | 1.25W |
| Description & Applications | Small switching Features The QS6M4 combines Pch Trench MOSFET with a Nch Trench MOSFET in a single TSMT6 package. Pch Trench MOSFET and Nch Trench MOSFET have a low on-state resistance with a fast switching. Applications Load switch, inverter |
| 描述与应用 | 小开关 特点 的QS6M4结合TSMT6包在一个单一的一个N沟道沟道MOSFET的P沟道沟道MOSFET。 P沟道沟道MOSFET和N沟道沟道MOSFET具有低导通电阻与快速切换。 应用 负荷开关，逆变器 |