| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 65GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 80~160 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 1.2W |
| Description & Applications | NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES PACKAGE DIMENSIONS • High gain (in millimeters) | S21 | *2= 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA • New power mini-mold package version of a 4-pin type gain-improved on the 2SC3357 |
| 描述与应用 | NPN外延硅晶体管 高频低失真放大器 特点包装尺寸 •高增益（毫米） | S21|* 2 =12 dB，F =1 GHz的，VCE= 10 V，IC=20毫安 •新的电源小型模具包版本的4针型 获得改善2SC3357 |