| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -400V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -400V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 35MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 140~450 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -400mV/-0.4V |
| 耗散功率PcPoWer Dissipation | 1W |
| Description & Applications | transistor silicon PNP triple diffused type Features high voltage； low saturation voltage |
| 描述与应用 | 硅PNP晶体管三重扩散类型 特点 高电压; 低饱和电压 |