| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 9V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 6V |
| 集电极连续输出电流ICCollector Current(IC) | 60mA |
| 截止频率fTTranstion Frequency(fT) | 12GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | Silicon NPN Planar RF Transistor Applications For low noise applicatins such as power amplifiers,mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to microwave frequencies. Features Low power applications Very low noise figure High transition frequency fT = 12 GHz Excellent large signal behaviour |
| 描述与应用 | 硅NPN平面RF晶体管 应用 如功率放大器，混频器和振荡器的模拟和数字电视系统（例如卫星调谐器）对于低噪声applicatins的微波频率。 特点 低功耗应用 非常低的噪声系数 过渡频率fT=12 GHz的 出色的大信号行为 |