| 最大源漏极电压VdsDrain-Source Voltage | 24V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | 6A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 13Ω@ VGS = 2.5V, ID = 1mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.8~1.5V |
| 耗散功率PdPower Dissipation | 1.3W |
| Description & Applications | N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Halogen free • 2.5V drive • Common drain type |
| 描述与应用 | N-沟道硅MOSFET 通用开关设备应用 特点 •低导通电阻。 •无卤 •2.5V驱动 •共漏极类型 |