| 反向电压VrReverse Voltage | 30V |
| 平均整流电流IoAVerage Rectified Current | 30mA |
| 最大正向压降VFForward Voltage(Vf) | 400mV/0.4V |
| 最大耗散功率PdPower dissipation | |
| Description & Applications | • Schottky Barrier Diodes (SBD) • Silicon epitaxial planar type • For switching circuits • S-mini type package (3-pin) of MA3X704A • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small temperature coefficient of forward characteristic • Extremely low reverse current IR |
| 描述与应用 | •肖特基势垒二极管（SBD） •硅外延平面型 •开关电路 •S-迷你型封装（3针）MA3X704A •低正向上升电压（VF）和满意的波检测效率（η） •温度系数小的正向特性 •极低的反向电流IR |