| 最大源漏极电压VdsDrain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 20A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 7.2mΩ@ VGS = 10V,ID = 20A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1~1.22 |
| 耗散功率PdPower Dissipation | 57W |
| Description & Applications | Features • Dual N-channel, logic level • Fast switching MOSFETs for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • Excellent gate charge product • Very low on-resistance R DS(on) • Superior thermal resistance • 100% avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 |
| 描述与应用 | 特点 •双N沟道逻辑电平 •快速开关MOSFET的开关电源 •优化技术的DC / DC转换器 •符合JEDEC为目标的应用程序 •优秀的栅极电荷乘积 •非常低的导通电阻R DS（ON） •卓越的热电阻 •100％雪崩测试 •无铅电镀，符合RoHS标准 •无卤素根据IEC61249-2-21 |