| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.11Ω/Ohm @2.5A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-3.0V |
| 耗散功率Pd Power Dissipation | 730mW/0.73W |
| Description & Applications | Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23 • Leading Planar Technology for Low Gate Charge / Fast Switching • 4.5 V Rated for Low Voltage Gate Drive • SOT−23 Surface Mount for Small Footprint (3 x 3 mm) • Pb−Free Package is Available |
| 描述与应用 | 功率MOSFET 30 V，2.5 A单N沟道，SOT-23 •领先的平面技术，低栅极电荷/快速切换 •4.5 V额定低电压栅极驱动 •SOT-23表面贴装小尺寸（3×3毫米） •无铅包装是可用 |